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Modeling analysis of AlN and AlGaN HVPE
A. S. Segal, D. S. Bazarevskiy, M. V. Bogdanov, E. V. Yakovlev
PSS 6 (2009) S329-332 (01) |
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| Comprehensive model of AlN and AlGaN HVPE is developed.
The model combines detailed description of the transport
processes and quasi-thermodynamic model of surface kinetics
at the Al/Ga metal surfaces and AlN/AlGaN crystal
surfaces. It is shown with the model that HCl dominantly
converts into trichloride AlCl3 in the Al source but into
monochloride GaCl in the Ga source. Then, AlN grows from
AlCl3 under essentially non-equilibrium conditions while
GaN – from GaCl under near-equilibrium conditions. The revealed
differences between the AlN and GaN growth features
explain many experimentally observed phenomena, including
a sharp saturated behavior of the AlN growth rate in variation
of the precursors flow rates and a strong effect of carrier H2
on the AlGaN composition. Generally, the model predicts a
high sensitivity of the AlGaN composition to variation of the
species flow rates due to their effect on the Ga incorporation. |
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