|
|
|
Algorithms and models for simulation of MOCVD of III-V layers in the planetary reactor.
Bergunde T., Dauelsberg M., Egorov Yu., Kadinski L., Makarov Yu.N., Schafer M., Strauch G., Weyers M.
Simulation of Semiconductor Devices and Processes, V.6, P.328-331 (01) |
 |
| Advances in development of mathematical models and numerial techniques for modelling of
MOCVD in the Planetary Reactor are presented. Importance of coupled flow and mass transport
calculations, accurate modelling of radiative heat transfer and complex chemical interactions is discussed. Advantages and disadvantages of block-structured and unstructured grid algorithms arc considered.
|
|
|
|
|
|
|
Subscribe to STR Newsletter
here
Download free Software DEMO Versions and Documentation
here
Useful Links
|
|
