STR will participate in International Workshop on Nitride Semiconductors (IWN 2010) that will take place in Tampa, Florida, USA on September 19-24, 2010. Wednesday morning (September 22) we will present our work "Strain Effects on Indium Incorporation and Optical Transitions in Bulk InGaN and Quantum Wells of Different Orientations" (11:30 AM, F1.11)

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