SiLENSe 4.1 Laser Edition has been released. In brief, main improvements include:
- Material properties of InAlGaAs and simulation example.
- Material properties and simulation examples for ZnO-based heterostructures
are updated.
- Computation of the band diagram, carrier energy levels and wave functions
at reverse bias (Sec. 11 of SiLENSe Physics Summary).
- Computation of the internal quantum efficiency (IQE) taking into account
radiative recombination in the active region only, as well as computation of
the injection efficiency (Sec. 7 of SiLENSe Physics Summary).
