Dr. Karpov and Dr. Ramm will talk about STR engineering tools for device modeling SimuLAD and SimuLAMP at seminars in China. Seminars will take place in Beijing and Shenzhen on May 20th and 21st 2010.
Additional information is available on Pitotech web-site:
www.pitotech.com/party.php
AIXTRON published a paper discussing how multiphysics modeling, employing models developed in collaboration with STR, allows one to reduce production costs and enhance process performance, see the article in EuroAsia semiconductor.
SiLENSe 4.2 Laser Edition has been released. New version includes material
properties of AlGaInP alloys and detailed information on contribution of
different transitions to the emission spectrum.
CGSim package used by leading makers of sapphire Ky and Cz crystals is now extended to perform 3D unsteady modeling of crystal seeding and body growth. New 3D options allows one to optimize wafer quality and crystal growth stability with the comprehensive analysis of unsteady melt flow features and crystallization dynamics, see Kyropoulos Sapphire page for details.