Consulting services in III-V Chemical Vapor Deposition include equipment and process
modeling of Metalorganic Vapor Phase Epitaxy (MOVPE) and Molecular
Beam Epitaxy (MBE) of conventional III-V semiconductor materials
and group III-Nitrides as well as of Hydride Vapor Phase Epitaxy (HVPE)
of group III-Nitrides. The consulting is based on advanced models of the underlying
physical and chemical phenomena and specific software tools. The simulations
cover the whole range of length and time scales involved into deposition process -
from reactor flow dynamics to adatom kinetics on the growing surfaces.
CVDSim - specialized
software package intended for modeling of epitaxy in mass-production and
research scale reactors.
for design and optimization of reactors for polycrystalline silicon deposition
from chlorosilanes by Siemens process.
for modeling of GaN crystal growth by hydride vapor phase epitaxy (HVPE).