STR Group - Modeling of crystal growth and devices

STR Group

Modeling of Crystal Growth and Devices

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Device Modeling

2010.08.26 September 19-24, IWN 2010

STR will participate in International Workshop on Nitride Semiconductors (IWN 2010) that will take place in Tampa, Florida, USA on September 19-24, 2010. Wednesday morning (September 22) we will present our work "Strain Effects on Indium Incorporation and Optical Transitions in Bulk InGaN and Quantum Wells of Different Orientations" (11:30 AM, F1.11) more...

2010.08.25 September 6-10. European Photovoltaic Solar Energy Conference and Exhibition

STR will participate in 25th European Photovoltaic Solar Energy Conference and Exhibition (25th EU PVSEC) / 5th World Conference on Photovoltaic Energy Conversion (WCPEC-5) that will take place in Feria Valencia, Spain on September 6-10. We will be presenting our products at booth L2/H3/A50 and make a presentation "Numerical modeling and optimization of crystallization process and species transport during Czochralski growth and Direct Solidification of silicon for solar cells" by A.D. Smirnov, A.N. Vorobiev, N.V. Durnev, V.V. Kalaev (session 2CV.1.35, Wednesday). more...

2010.08.02 August 8 - 13. Conference in Beijing, China

On August 8 through August 13 STR is presenting in Beijing, China at The 16th International Conference on Crystal Growth(ICCG-16) held in conjunction with The 14th International Conference on Vapor Growth and Epitaxy(ICVGE-14). See us at booth B01. more...

2010.05.16 STR at ICMOVPE-15

STR will participate in the ICMOVPE-15 opening on May 23rd in Lake Tahoe, California. The following materials will be presented: "Single QW Deep-Green Leds with Buried InGaN/GaN Short-Period Superlattice", "AlGaN Gr. Rate and Comp. in a Close-Coupled Showerhead MOVPE Reactor", "Investigation of Nitride MOVPE at High Pressure and High Gr. Rates in Large Production Reactors by a Combined Modelling and Experimental Approach". See abstracts. more...

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